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AL-E479 STATIC AND DYNAMIC CHARACTERISTICS OF IGBT AND MOSFET


Discription:

SCOPE OF LEARNING:

  • Study of V-I Characteristics of IGBT
  • Study of V-I Characteristics of MOSFET
  • Study of Gate Drive Characteristics of IGBT
  • Study of Gate Drive Characteristics of MOSFET

TECHNICAL SPECIFICATIONS:

Digital Meters:

  • Voltmeter 20VDC.
  • Ammeter 200mA DC.
  • Voltmeter 200V DC.

Power Supplies:

  • DC Supply IC Regulated 0-10V DC, 150mA.
  • DC Supply IC Regulated 0-30V DC, 150mA.
    • Operated on Mains power 230V, 50Hz +10%

Components are mounted on the panels are:

  • IGBT 25N120 (2Nos.).
  • MOSFET 1RF540 (2Nos.)
  • Voltage Control through Potentiometer.
  • PWM Pulse Generator Circuit.
  • Frequency Control Through Potentiometer
  • PWM Control Through Potentiometer
  • Resistors for Load

SALIENT FEATURES:

  • Protection Cover
  • Front panel built with high class insulated Printed Circuit Board sheet with well printed circuits and      symbols.
    • Fuse for Short Circuit protection
    • Instruction manual.
    • Connections are brought out through 2mm Colored Sockets.
    • Patch Cords 2mm.
    • The trainer is housed in ABS Plastic cabinet.
    • Size of the trainer set 12”x8”

OPTIONAL ACCESSORIES:

  • Multimeter

Category:
POWER ELECTRONICS & DRIVE LAB
product Name:
AL-E479 STATIC AND DYNAMIC CHARACTERISTICS OF IGBT AND MOSFET
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